Title :
4G antenna tuner integrated in a 130 nm CMOS SOI technology
Author :
Sonnerat, Florence ; Pilard, Romain ; Gianesello, Frédéric ; Pennec, François Le ; Person, Christian ; Gloria, Daniel
Author_Institution :
Technol. R&D, STMicroelectron., Crolles, France
Abstract :
In order to counteract antenna impedance mismatch due to interaction with environment, one solution is to use a tuner between the front end module and the antenna. In this paper, a 4G antenna tuner integrated in STMicroelectronics 130 nm CMOS SOI technology and operating between 2500 MHz and 2690 MHz is described. Thanks to high power CMOS SOI Digitally Tunable Capacitances (DTCs), the proposed tuner is able to match to 50 Ω an antenna presenting a VSWR degraded up to 5:1. Minimal input reflection coefficient of -10 dB is reached and promising insertion losses are obtained (minimal losses of 3.5 dB for an antenna with initial VSWR of 5:1).
Keywords :
CMOS integrated circuits; antenna accessories; silicon-on-insulator; 4G antenna tuner; CMOS SOI digitally tunable capacitance; CMOS SOI technology; STMicroelectronics; VSWR; antenna impedance mismatch; front end module; promising insertion losses; resistance 50 ohm; size 130 nm; Antenna measurements; Antennas; CMOS integrated circuits; Capacitance; Insertion loss; Loss measurement; Tuners; 4G-LTE applications; CMOS SOI technology; Embedded antenna tuner;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
DOI :
10.1109/SiRF.2012.6160134