Title :
A 140 GHz single-ended injection locked frequency divider with inductive feedback in SiGe HBT technology
Author :
Yun, Jongwon ; Kim, Hyunchul ; Seo, Hyogi ; Rieh, Jae-Sung
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
In this work, a single-ended divide-by-2 injection locked frequency divider with inductive feedback is presented. The frequency divider, fabricated in a commercial 0.18 μm SiGe HBT technology, showed a measured locking range of 126.9-141.5 GHz (14.7 GHz) and an operating range of 126.9-150.0 GHz (23.1 GHz) with bias adjustment. The DC power consumption of the ILFD core was 6.9 mW and that of the output buffer was 13.5 mW.
Keywords :
Ge-Si alloys; frequency dividers; heterojunction bipolar transistors; HBT technology; SiGe; frequency 126.9 GHz to 150 GHz; frequency 14.7 GHz; frequency 140 GHz; frequency 23.1 GHz; inductive feedback; power 13.5 mW; power 6.9 mW; single-ended divide-by-2 injection locked frequency divider; size 0.18 mum; CMOS integrated circuits; CMOS technology; Frequency conversion; Frequency measurement; Heterojunction bipolar transistors; Oscillators; Silicon germanium; feedback; heterojunction bipolar transistors; silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
DOI :
10.1109/SiRF.2012.6160135
