DocumentCode :
3419614
Title :
On Gm-boosting and cyclostationary noise mechanisms in low-voltage CMOS differential Colpitts VCOs
Author :
Koukab, Adil ; Amiri, Omid Talebi
Author_Institution :
Swiss Fed. Inst. of Technol. in Lausanne (EPFL), Lausanne, Switzerland
fYear :
2012
fDate :
16-18 Jan. 2012
Firstpage :
65
Lastpage :
68
Abstract :
This paper presents a theoretical study of CMOS differential Colpitts VCOs. The objective is to provide a deep understanding of the different mechanisms that impact the performances of these VCOs, namely the Gm-boosting and cyclostationary noise. The developed methodology and expressions can be used to analyze, optimize and build new VCO topologies. A novel topology with an optimized gate to source (GS) feedback is proposed. It exhibits a figure of merit (FOM) better than -190 dBc/Hz/mW for all the frequency offsets.
Keywords :
CMOS analogue integrated circuits; voltage-controlled oscillators; Gm boosting; cyclostationary noise mechanism; low voltage CMOS differential Colpitts VCO; Phase noise; Switching circuits; Topology; Transconductance; Transistors; Voltage-controlled oscillators; Colpitts; Voltage-controlled oscillator (VCO); flicker noise; phase noise; thermal noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
Type :
conf
DOI :
10.1109/SiRF.2012.6160136
Filename :
6160136
Link To Document :
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