Title :
Cathodoluminescence properties of silicon thin films crystallized by electron beam exposure
Author :
Seon Yong Park ; Su Woong Lee ; Jung Soo Kang ; Ha Rim Lee ; Mi Yeon Joo ; Jin Kyo Kim ; Kyu Chang Park
Author_Institution :
Dept. of Inf. Display & Adv. Display Center, Kyung Hee Univ., Seoul, South Korea
Abstract :
In this study, we investigated cathodoluminescence properties from silicon thin film after electron beam exposure on amorphous silicon film. The emission spectrum shows broad distribution in the visible region. Raman spectroscopy and SEM measurement shows that the area exposed by E-beam is crystallized. However the intensities of CL spectra of a-Si weakly appeared at 500 ~ 800 nm. The origin of CL spectrum from the silicon film exposed by E-beam will be discussed.
Keywords :
Raman spectra; amorphous semiconductors; cathodoluminescence; crystallisation; electron beam effects; elemental semiconductors; scanning electron microscopy; semiconductor thin films; silicon; E-beam; Raman spectroscopy; SEM measurement; Si; amorphous silicon films; cathodoluminescence spectral intensity; electron beam exposure; emission spectrum; silicon thin film crystallization; visible region; wavelength 500 nm to 800 nm; Educational institutions; Materials; Welding; CL; E-beam; Raman; SEM; crystallization; silicon;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2013 26th International
Conference_Location :
Roanoke, VA
DOI :
10.1109/IVNC.2013.6624766
