Ultra-compact 1 W GaAs SPDT switch IC

Author

Yamaguchi, T. ; Sawai, T. ; Nishida, M. ; Sawada, M.

Author_Institution

Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan

Volume

1

fYear

1999

fDate

13-19 June 1999

Firstpage

315

Abstract

An ultra-compact 1 W GaAs SPDT switch IC operating at +3/0 V is demonstrated. The switch IC consists of multi-gate FETs in which multiple gate electrodes are arranged between source and drain electrodes. By optimizing device parameters, the chip size has been reduced to 1.1 mm/spl times/0.55 mm. Also, the N/sup +/ regions in the FET are connected by fine high-resistance elements to provide a uniform electric potential between gate electrodes. As a result, the linearity of the output power is improved 1 dB at a frequency of 0.9 GHz.

Keywords

III-V semiconductors; UHF integrated circuits; field effect MMIC; field effect transistor switches; gallium arsenide; microwave switches; switching circuits; 0.9 GHz; 1 W; 3 V; GaAs; GaAs SPDT switch IC; connected N/sup +/ regions; fine high-resistance elements; multi-gate FETs; multiple gate electrodes; output power linearity; ultra-compact switch IC; uniform electric potential; Circuits; Communication switching; Electrodes; FETs; Gallium arsenide; Insertion loss; Linearity; Power generation; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779483

Filename

779483