A comparison of high power solid state GaAs FETs versus microwave power modules from a user´s perspective: the Cooperative Engagement Capability program

Author

Foreman, E.E. ; Smith, M.C.

Author_Institution

Raytheon Syst. Co., St. Petersburg, FL, USA

Volume

1

fYear

1999

fDate

13-19 June 1999

Firstpage

333

Abstract

This paper presents data resulting from a comparison between two alternate high power (>100 watts) transmitter technologies, solid state GaAs FETs and Microwave Power Modules (MPMs), used to drive individual elements of an airborne array for the Navy´s Cooperative Engagement Capability (CEC) program. The results should help others select between competing technologies when size, weight, cooling, and prime power concerns are critical (i.e., aircraft, satellites, ground mobile units, and high power arrays).

Keywords

gallium arsenide; microwave field effect transistors; microwave power amplifiers; microwave power transistors; modules; power electronics; power field effect transistors; transmitters; travelling wave tubes; 100 W; Cooperative Engagement Capability program; GaAs; TWT; airborne array; high power solid state GaAs FETs; high power transmitter technologies; microwave power modules; Cooling; FETs; Gallium arsenide; Microwave antenna arrays; Microwave technology; Military aircraft; Multichip modules; Satellites; Solid state circuits; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779487

Filename

779487