DocumentCode :
3419784
Title :
Wideband 60 GHz SiGe-BiCMOS vector modulator for ultra-high-datarate wireless transmitters
Author :
Hellfeld, Marcus ; Carta, Corrado ; Ellinger, Frank
Author_Institution :
Dept. of Circuit Design & Network Theor., Tech. Univ. of Dresden, Dresden, Germany
fYear :
2012
fDate :
16-18 Jan. 2012
Firstpage :
85
Lastpage :
88
Abstract :
This paper presents the design and characterization of a vector quadrature modulator integrated circuit, fabricated in a 0.25 μm SiGe BiCMOS technology for use in a QPSK wireless transmission system at 60 GHz. The approach chosen for narrowband quadrature generation allows the integration on a 0.98 mm×0.88 mm area, significantly smaller than other reported mm-wave quadrature modulator ICs. The circuit consists of two active double-balanced mixers and a network of transmission lines, whose impedances and lengths are designed to provide simultaneously quadrature differential signals and power matching to 50 Ω for the high-frequency ports of the mixers. On-wafer characterization of the modulator showed an amplitude error of only 0.3 dB and a phase error of 20°, suitable for single-carrier QPSK communications. For optimal operation, the circuit requires -3 dBm of carrier power and 16 mA of bias current from a 3 V supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit design; millimetre wave integrated circuits; mixers (circuits); modulators; quadrature phase shift keying; radio transmitters; BiCMOS technology; QPSK wireless transmission system; SiGe; active double-balanced mixers; current 16 mA; frequency 60 GHz; high-frequency ports; mm-wave quadrature modulator IC; narrowband quadrature generation; on-wafer characterization; quadrature differential signals; resistance 50 ohm; single-carrier QPSK communications; size 0.25 mum; size 0.88 mm; size 0.98 mm; transmission lines; ultra-high-data rate wireless transmitters; vector quadrature modulator integrated circuit; voltage 3 V; wideband BiCMOS vector modulator; Baseband; Impedance; Integrated circuits; Mixers; Modulation; Radio frequency; Vectors; 60 GHz; Millimeter-wave integrated circuits; SiGe BiCMOS; vector modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
Type :
conf
DOI :
10.1109/SiRF.2012.6160145
Filename :
6160145
Link To Document :
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