High performance RF inductors integrated in advanced Fan-Out wafer level packaging technology

Author

Durand, Cedric ; Gianesello, Frederic ; Pilard, Romain ; Gloria, Daniel ; Imbs, Yvon ; Coffy, Romain ; Marechal, Laurent ; Jin, Yonggang ; Dodo, Yves

Author_Institution

STMicroelectron., Technol. R&D, Crolles, France

fYear

2012

fDate

16-18 Jan. 2012

Firstpage

215

Lastpage

218

Abstract

This paper aims to make a full evaluation of inductor performances integrated in multi layer FO-WLP technology. Technology interest for radio frequency passives is first discussed. The inductor offer, composed of four different inductor families, is described including more than 200 different inductors that were fabricated. Measurements exhibit promising quality factors for such packaging technology, with Q>;50 for a 1.1nH inductor. Comparison with inductors integrated in CMOS demonstrates a 2.4 times quality factor improvement in favor of FO-WLP while the global size is nearly identical. FO-WLP technology has then to be considered as a very promising technology for the integration of high quality passive in CMOS.

Keywords

CMOS integrated circuits; Q-factor; inductors; wafer level packaging; CMOS; RF inductor; fan-out wafer level packaging technology; multilayer FO-WLP technology; quality factor; radio frequency passives; Coils; Inductors; Performance evaluation; Q factor; Radio frequency; Silicon; Three dimensional displays; BGA; CMOS integrated inductors; FO-WLP; Fan-in; Fan-out; Inductors; RF passives; eWLB;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4577-1317-0

Type

conf

DOI

10.1109/SiRF.2012.6160146

Filename

6160146