W-band InGaP/GaAs HBT MMIC frequency sources

Author

Heins, M.S. ; Juneja, T. ; Fendrich, J.A. ; Mu, J. ; Scott, D. ; Yang, Q. ; Hattendorf, M. ; Stillman, G.E. ; Feng, M.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

1

fYear

1999

fDate

13-19 June 1999

Firstpage

239

Abstract

W-band frequency sources using InGaP/GaAs HBTs are compared. The first is a fundamental frequency oscillator that provides 93 mW output power at 73.5 GHz in a compact (0.404 mm/sup 2/) chip, while the other is a doubled 38 GHz VCO providing 75 /spl mu/W output power and improved phase noise in a 5 times larger (2.139 mm/sup 2/) chip. The trade-offs in both of these designs are discussed. It was also found that cooling the 38 GHz VCOs to 100 K and 200 K improved the phase noise performance.

Keywords

III-V semiconductors; MMIC oscillators; bipolar MIMIC; cooling; cryogenic electronics; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit noise; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 100 K; 200 K; 38 GHz; 73.5 GHz; 75 muW; 93 muW; EHF; HBT MMIC frequency sources; InGaP-GaAs; VCO; W-band MIMIC; cooling; fundamental frequency oscillator; phase noise performance; 1f noise; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Kelvin; MMICs; Phase noise; Power generation; Radar; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779519

Filename

779519