Substrate engineering using Smart CutTM and Smart StackingTM for next-generation advanced LSIs

Substrate engineering using Smart Cut^TM and Smart Stacking^TM for advanced LSIs is overviewed. For digital CMOS applications, planar fully-depleted (FD) SOI structure provides a realistic solution to bridge the technology gap between bulk CMOS and three-dimensional FD structures. Production of planar FD-SOI will be started soon in 28nm technology. RF applications, on the other hand, are the areas where substrate engineering is bringing unique values in performance enhancement with cost efficiency. Adoption of high-resistivity SOI in front-end module (FEM) is rapidly in progress. Meanwhile, bonded SOS has been proven to provide excellent RF performance with its ideal Si crystal-quality and insulating substrate. Smart Cut^TM is also extending applications in power electronics, photonics, and MEMS applications, with its wide range of flexibility in Si and BOX thicknesses. By combining Smart Stacking^TM and Smart Cut^TM, various circuit layers can be bonded onto another circuits, constructing innovative multi-functional 3D devices, such as intelligent image sensors, logic-memory stacked devices, advanced photonics circuits, etc.