Lateral microwave transformers and inductors implemented in a Si/SiGe HBT process

Author

Laney, D.C. ; Larson, L.E. ; Chan, P. ; Malinowski, J. ; Harame, D. ; Subbanna, S. ; Volant, R. ; Case, M.

Author_Institution

California Univ., San Diego, La Jolla, CA, USA

Volume

3

fYear

1999

fDate

13-19 June 1999

Firstpage

855

Abstract

Experimental results are presented on a set of microwave inductors and transformers fabricated in a lateral spiral design utilizing two metal layers rather than a single metal layer as used in conventional planar magnetic devices. The fabrication process utilizes a production Si-SiGe HBT technology with standard metallization and a thick polyimide dielectric. Inductors with peak Q´s between 2.6-5 and inductance values between 1-3 nH are presented. Transformers with a loss of less than 5 dB when corrected for impedance mismatch and a measured coupling coefficient (k) of 0.6 at 5.5 GHz and 0.4 up to 12.5 GHz are also discussed.

Keywords

Ge-Si alloys; Q-factor; bipolar MMIC; equivalent circuits; heterojunction bipolar transistors; high-frequency transformers; inductors; magnetic microwave devices; silicon; 5 to 20 GHz; Si MMIC applications; Si-SiGe; Si/SiGe HBT process; fabrication process; lateral microwave inductors; lateral microwave transformers; lateral spiral design; planar magnetic devices; production HBT technology; standard metallization; thick polyimide dielectric; two metal layers; Dielectric loss measurement; Fabrication; Heterojunction bipolar transistors; Inductors; Magnetic devices; Metallization; Microwave devices; Production; Spirals; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779521

Filename

779521