Title :
A new method to analyze the behavior of SiGe:C HBTs under RF large signal stress
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
An integrated oscillator was designed to analyze the behavior of high-performance SiGe:C HBTs under RF large signal stress. The properties of the oscillator core HBTs can easily be monitored during the whole test period. A complex measurement setup was arranged to perform all tests without the need to reconfigure the measurement setup. First experimental data are presented demonstrating a degradation of the HBT 1/f noise and base current behavior caused by the applied RF large signal stress.
Keywords :
1/f noise; Ge-Si alloys; carbon; heterojunction bipolar transistors; radiofrequency oscillators; semiconductor doping; silicon compounds; HBT 1/f noise; RF large signal stress; SiGe:C; base current behavior; complex measurement setup; integrated oscillator; oscillator core HBT; Current measurement; Frequency measurement; Heterojunction bipolar transistors; Noise; Oscillators; Radio frequency; Stress; 1/f noise; RF Large Signal Stress; RF circuits; Silicon bipolar/BiCMOS process technology; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
DOI :
10.1109/SiRF.2012.6160152
