DocumentCode
3420140
Title
Compact modeling based extraction of RF noise in SiGe HBT terminal currents
Author
Xu, Ziyan ; Niu, Guofu
Author_Institution
Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA
fYear
2012
fDate
16-18 Jan. 2012
Firstpage
137
Lastpage
140
Abstract
This paper presents a general purpose method of extracting RF noise in SiGe HBT base and collector currents using the very same compact models used for RFIC design. Practical issues with experimental data are discussed.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; integrated circuit noise; radiofrequency integrated circuits; semiconductor device noise; semiconductor heterojunctions; semiconductor materials; RFIC design; SiGe; SiGe HBT base current; SiGe HBT collector current; SiGe HBT terminal current; compact modeling-based RF noise extraction; Correlation; Frequency measurement; Integrated circuit modeling; Noise; Noise measurement; Thermal noise; Noise modeling; RF noise; SiGe HBT;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location
Santa Clara, CA
Print_ISBN
978-1-4577-1317-0
Type
conf
DOI
10.1109/SiRF.2012.6160162
Filename
6160162
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