Title :
Compact modeling based extraction of RF noise in SiGe HBT terminal currents
Author :
Xu, Ziyan ; Niu, Guofu
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA
Abstract :
This paper presents a general purpose method of extracting RF noise in SiGe HBT base and collector currents using the very same compact models used for RFIC design. Practical issues with experimental data are discussed.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; integrated circuit noise; radiofrequency integrated circuits; semiconductor device noise; semiconductor heterojunctions; semiconductor materials; RFIC design; SiGe; SiGe HBT base current; SiGe HBT collector current; SiGe HBT terminal current; compact modeling-based RF noise extraction; Correlation; Frequency measurement; Integrated circuit modeling; Noise; Noise measurement; Thermal noise; Noise modeling; RF noise; SiGe HBT;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
DOI :
10.1109/SiRF.2012.6160162
