Title :
Electrical and physical characteristics of the high-k Ti-doped Ce2O3 (Ce2Ti2O7) dielectrics combined with rapid thermal annealing
Author :
Chyuan-Haur Kao ; Chien-Jung Liao ; Lien-Tai Kuo ; Che-Chun Liu
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Kwei-Shan, Taiwan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper, electrical and physical characteristics of the addition of Ti into Ce2O3 dielectric films on the single crystalline silicon were studied. It can be found that the high-k Ce2Ti2O7 gate dielectrics with post rapid thermal annealing (RTA) can show higher dielectric constant, smaller gate voltage shift, higher breakdown electric field and smaller charge trapping rate.
Keywords :
cerium compounds; electric breakdown; elemental semiconductors; high-k dielectric thin films; permittivity; rapid thermal annealing; silicon; titanium; RTA; Si-Ce2O3(Ce2Ti2O7):Ti; breakdown electric field; charge trapping rate; dielectric constant; electrical characteristics; high-k dielectric film; physical characteristics; post rapid thermal annealing; single crystalline silicon; smaller gate voltage shift; Annealing; Dielectrics; Films; High K dielectric materials; Logic gates; Silicon; Stress;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467831
