Electrical and physical characteristics of the high-k Ti-doped Ce2O3 (Ce2Ti2O7) dielectrics combined with rapid thermal annealing

Author

Chyuan-Haur Kao ; Chien-Jung Liao ; Lien-Tai Kuo ; Che-Chun Liu

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Kwei-Shan, Taiwan

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, electrical and physical characteristics of the addition of Ti into Ce₂O₃ dielectric films on the single crystalline silicon were studied. It can be found that the high-k Ce₂Ti₂O₇ gate dielectrics with post rapid thermal annealing (RTA) can show higher dielectric constant, smaller gate voltage shift, higher breakdown electric field and smaller charge trapping rate.

Keywords

cerium compounds; electric breakdown; elemental semiconductors; high-k dielectric thin films; permittivity; rapid thermal annealing; silicon; titanium; RTA; Si-Ce₂O₃(Ce₂Ti₂O₇):Ti; breakdown electric field; charge trapping rate; dielectric constant; electrical characteristics; high-k dielectric film; physical characteristics; post rapid thermal annealing; single crystalline silicon; smaller gate voltage shift; Annealing; Dielectrics; Films; High K dielectric materials; Logic gates; Silicon; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467831

Filename

6467831