DocumentCode :
3420159
Title :
Impact of high frequency correlated noise on SiGe HBT low noise amplifier design
Author :
Shen, Pei ; Niu, Guofu ; Xu, Ziyan ; Zhang, Wanrong
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., Auburn, AL, USA
fYear :
2012
fDate :
16-18 Jan. 2012
Firstpage :
125
Lastpage :
128
Abstract :
This paper investigates the impact of high frequency noise correlation on SiGe HBT LNA design. With correlation, simultaneous noise and impedance match is found to continue to hold approximately. However, a larger size and hence a higher biasing current are required for noise matching. The actual noise figure (NF) of LNAs designed without considering noise correlation is also investigated. Further investigation shows that a size considerably smaller than noise matching size is more preferable, as it produces high gain, high linearity and NF only slightly higher noise figure at much smaller power consumption.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; impedance matching; low noise amplifiers; HBT LNA design; HBT low noise amplifier design; NF; SiGe; biasing current; high frequency noise correlation; impedance matching; noise figure; power consumption; Impedance matching; Integrated circuit modeling; Noise; Noise measurement; Optimized production technology; SPICE; Transistors; Cascode LNA; emitter length; high frequency noise correlation; noise figure;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
Type :
conf
DOI :
10.1109/SiRF.2012.6160163
Filename :
6160163
Link To Document :
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