DocumentCode
3420194
Title
Silicon CMOS/SiGe transceiver circuits for THz applications
Author
Pfeiffer, U.R.
Author_Institution
High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal, Germany
fYear
2012
fDate
16-18 Jan. 2012
Firstpage
159
Lastpage
162
Abstract
The push towards terahertz frequencies presents both challenges and opportunities for emerging applications and circuit. In this paper, recent attempts to operate SiGe and CMOS technologies beyond their transistor cut-off frequencies will be presented. Among others, the circuit designs include monolithically integrated THz CMOS focal-plane arrays and 820 GHz sub-harmonically pumped SiGe HBT imaging chip-sets including integrated antennas.
Keywords
CMOS integrated circuits; Ge-Si alloys; MOSFET; integrated circuit design; submillimetre wave integrated circuits; transceivers; SiGe; THz CMOS focal-plane arrays; THz applications; circuit designs; cut-off frequencies; frequency 820 GHz; integrated antennas; silicon CMOS transceiver circuits; subharmonically pumped HBT imaging chip-sets; CMOS integrated circuits; Imaging; Mixers; Noise; Receivers; Silicon germanium; System-on-a-chip; CMOS/BiCMOS technology; SiGe technology; receiver; terahertz circuits; transmitter;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location
Santa Clara, CA
Print_ISBN
978-1-4577-1317-0
Type
conf
DOI
10.1109/SiRF.2012.6160166
Filename
6160166
Link To Document