Title :
Silicon CMOS/SiGe transceiver circuits for THz applications
Author_Institution :
High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal, Germany
Abstract :
The push towards terahertz frequencies presents both challenges and opportunities for emerging applications and circuit. In this paper, recent attempts to operate SiGe and CMOS technologies beyond their transistor cut-off frequencies will be presented. Among others, the circuit designs include monolithically integrated THz CMOS focal-plane arrays and 820 GHz sub-harmonically pumped SiGe HBT imaging chip-sets including integrated antennas.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; integrated circuit design; submillimetre wave integrated circuits; transceivers; SiGe; THz CMOS focal-plane arrays; THz applications; circuit designs; cut-off frequencies; frequency 820 GHz; integrated antennas; silicon CMOS transceiver circuits; subharmonically pumped HBT imaging chip-sets; CMOS integrated circuits; Imaging; Mixers; Noise; Receivers; Silicon germanium; System-on-a-chip; CMOS/BiCMOS technology; SiGe technology; receiver; terahertz circuits; transmitter;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
DOI :
10.1109/SiRF.2012.6160166
