Title :
Wide-band CDMA highly-efficient heterojunction FET over wide range output power with DC-DC converter
Author :
Nishimura, T.B. ; Iwata, N. ; Hau, G.
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
1.95 GHz Wide-band CDMA performance of a 19.2 mm gate width heterojunction FET (HJFET) over a wide range output power (P/sub out/) is described. Operated at 3.5 V and a quiescent drain current (I/sub q/) of 50 mA, the HJFET exhibited 54.0% power added efficiency (PAE) with 580 mW (27.6 dBm) P/sub out/ and 10.4 dB associate gain at the distortion criteria. Utilizing a DC-DC converter as a drain bias supply, the FET achieved 21.0% PAE which includes the conversion efficiency at 20 mW P/sub out/ under a drain bias voltage of 1.0 V and I/sub q/ of 2 mA (Class B operation). The HJFET with a DC-DC converter is promising for power amplifier application of the W-CDMA cellular phones.
Keywords :
DC-DC power convertors; UHF field effect transistors; code division multiple access; junction gate field effect transistors; power field effect transistors; radio equipment; 1.95 GHz; 10.4 dB; 3.5 V; 50 mA; 54.0 percent; 580 mW; DC-DC converter; W-CDMA cellular phone; Wide-band CDMA; class B operation; conversion efficiency; heterojunction FET; output power; power added efficiency; power amplifier; quiescent drain current; Cellular phones; DC-DC power converters; FETs; Gain; Heterojunctions; Multiaccess communication; Power amplifiers; Power generation; Voltage; Wideband;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779577
