Title :
A buried p-gate heterojunction field effect transistor for a power amplifier of digital wireless communication systems
Author :
Nakamura, M. ; Wada, S. ; Abe, M. ; Kawasaki, H. ; Hase, I.
Author_Institution :
Res. Center, Sony Corp., Kanagawa, Japan
Abstract :
A buried p/sup +/-AlGaAs gate AlGaAs-InGaAs-AlGaAs double heterojunction FET has been developed for power amplifiers of advanced wireless communication handsets. The buried p/sup +/-AlGaAs gate was formed by a Zn diffusion technique. A low on-resistance of 1.6 /spl Omega/ mm and a high gate built-in voltage of 1.5 V with a maximum transconductance of 420 mS/mm were realized for a 0.8 /spl mu/m gate device. An output power of 22.1 dBm, an ACPR of -48.8 dBc/30 kHz and an efficiency of 50.4% were obtained under 1.9 GHz narrow band CDMA signal excitation and positive gate bias operation.
Keywords :
UHF field effect transistors; UHF power amplifiers; digital radio; mobile radio; power field effect transistors; 0.8 micron; 1.5 V; 1.9 GHz; 420 mS/mm; 50.4 percent; AlGaAs-InGaAs-AlGaAs; Zn diffusion technique; buried p-gate HFET; digital wireless communication systems; double heterojunction FET; handsets; heterojunction field effect transistor; narrow band CDMA signal excitation; positive gate bias operation; power amplifier; Double-gate FETs; Heterojunctions; Narrowband; Power amplifiers; Power generation; Telephone sets; Transconductance; Voltage; Wireless communication; Zinc;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779578
