Title :
Low motional resistance ring-shaped contour-mode aluminum nitride piezoelectric micromechanical resonators for UHF applications
Author :
Piazza, G. ; Stephanou, P.J. ; Porter, J.M. ; Wijesundara, M.B.J. ; Pisano, A.P.
Author_Institution :
Berkeley Sensors & Actuators Center, California Univ., Berkeley, CA, USA
fDate :
30 Jan.-3 Feb. 2005
Abstract :
This paper reports experimental results on a new class of ring-shaped, contour-mode aluminum nitride piezoelectric resonators that span a frequency range from 223 MHz to 656 MHz showing high quality factors in air (Qmax=2,900 at 472.7 MHz), low motional resistance (ranging from 56 to 205 Ω), and center frequencies that can be lithographically tuned. These resonators achieve the lowest value of motional resistance ever reported for contour-mode resonators and combine it with high Q factors, therefore truly enabling the fabrication of arrays of microresonators with different frequencies on a single chip. Uncompensated temperature coefficients of frequency of only approximately -25 ppm/°C were also recorded for these resonators.
Keywords :
III-V semiconductors; Q-factor; UHF devices; aluminium compounds; crystal resonators; micromechanical resonators; wide band gap semiconductors; 223 to 656 MHz; 56 to 205 ohm; AlN; UHF applications; contour-mode resonators; low motional resistance resonators; microresonators array; piezoelectric micromechanical resonators; quality factors; ring-shaped resonators; uncompensated temperature coefficients; Aluminum nitride; Fabrication; Film bulk acoustic resonators; Frequency; Immune system; Microcavities; Piezoelectric films; Q factor; Shape; Temperature;
Conference_Titel :
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
Print_ISBN :
0-7803-8732-5
DOI :
10.1109/MEMSYS.2005.1453857