Title :
Graphene review: An emerging RF technology
Author :
Moon, J.S. ; Antcliffe, M. ; Seo, H.C. ; Lin, S.C. ; Schmitz, A. ; Milosavljevic, I. ; McCalla, K. ; Wong, D. ; Gaskill, D.K. ; Campbell, P.M. ; Lee, K.-M. ; Asbeck, P.
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
Abstract :
Currently, graphene is a topic of very active research fields from science to potential applications. For various RF circuit applications, including low-noise amplifiers, the unique ambipolar nature of graphene field-effect-transistors (FETs) can be utilized for high-performance frequency multipliers, mixers and high-speed radio meters. Potential integration of graphene on Silicon substrates with CMOS compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene MOSFETs to minimize parasitics and improve gate modulation efficiency in the channel with zero or a small bandgap. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. We also attempt to discuss future applications and challenges of graphene.
Keywords :
CMOS integrated circuits; MOSFET; graphene; radiofrequency integrated circuits; C; CMOS compatibility; RF circuit; RF technology; Si; gate modulation efficiency; graphene; graphene MOSFET scaling; graphene field-effect-transistors; high-performance frequency multipliers; high-speed radiometers; low-noise amplifiers; mixers; Epitaxial growth; FETs; Logic gates; Moon; Radio frequency; Silicon; Ambipolar; Antenna; CMOS; EMI; FET; Graphene; Low-noise amplifier; Mixer; Multiplier; NEMS; Phase noise; RF; Radiometer; Transistor; fMAX; fT; interconnects; sensors;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
DOI :
10.1109/SiRF.2012.6160170