Title :
Small- and large-signal operation of X-band CE and CB SiGe/Si power HBT´s
Author :
Jae-Sung Rieh ; Liang-Hung Lu ; Zhenqiang Ma ; Xuefeng Liu ; Katehi, P.B. ; Bhattacharya, P. ; Croke, E.T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Common-emitter (CE) and common-base (CB) multifinger SiGe/Si power heterojunction bipolar transistors (HBTs) for X-band operation are reported for the first time. 10-finger CB and CE devices show f/sub max/ of 28 GHz and 20 GHz, maximum PAE of 34.9% and 17.5%, and P/sub out/ at 1 dB gain compression point of 15.6 dBm and 17.5 dBm, respectively, in class A operation at 8 GHz for CW mode.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor materials; silicon; 17.5 percent; 20 GHz; 28 GHz; 34.9 percent; 8 GHz; CW mode; SHF; SiGe-Si; SiGe/Si power HBT; X-band operation; class A operation; common-base configuration; common-emitter configuration; large-signal operation; multifinger type; power heterojunction bipolar transistors; small-signal operation; Fabrication; Fingers; Frequency response; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Molecular beam epitaxial growth; Silicon germanium; Thermal conductivity; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779600
