DocumentCode
342038
Title
High efficiency 0.4 /spl mu/m gate LDMOS power FET for low voltage wireless communications
Author
Ma, G. ; Burger, W. ; Shields, M.
Author_Institution
2100 E Elliot Road, MD EL720, Tempe, AS, USA
Volume
3
fYear
1999
fDate
13-19 June 1999
Firstpage
1195
Abstract
A low cost, high efficiency 4th generation silicon MOSFET using RFLDMOS (LV4) 0.4 /spl mu/m technology is presented which has been developed for high frequency (1-2 GHz) and low voltage (2.2-12.5 V) applications. Key results include 78% PAE at 31.8 dBm for 3.6 V, 900 MHz AMPS applications, and 63% PAE, 12.5 dB gain, 30.5 dBm for 2.4 V, 900 MHz for 2-way paging applications.
Keywords
UHF field effect transistors; elemental semiconductors; mobile radio; power MOSFET; silicon; 0.4 micron; 12.5 dB; 2-way paging applications; 2.2 to 12.5 V; 63 percent; 78 percent; 900 MHz to 2 GHz; AMPS applications; LDMOS power FET; LV wireless communications; RFLDMOS technology; Si; Si MOSFET; UHF FET; high efficiency power FET; low cost device; Capacitance; Costs; FETs; Implants; Low voltage; MOSFET circuits; Radio frequency; Silicon; Transconductance; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779601
Filename
779601
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