Title :
An a-IGZO TFT pixel circuit for AMOLED with simultaneous VT compensation
Author :
Chuanli Leng ; Congwei Liao ; Longyan Wang ; Shengdong Zhang
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper, a four a-IGZO TFTs based pixel circuit with simultaneous VT compensation function for AMOLED is proposed. The proposed circuit can not only simplify the peripheral circuits of the panel, but also compensate for both positive and negative VT shift with a charging VT-generation method. Simulation results show that the current changes only by 18.9% and 3.9% when ΔVT is -3 V and 2 V, respectively. Furthermore, by applying the grouping driving scheme, the OLED lighting time can be largely increased which manifests superiority when applied to high resolution or high frame rate displays.
Keywords :
II-VI semiconductors; LED displays; amorphous semiconductors; charge compensation; gallium compounds; indium compounds; organic light emitting diodes; thin film transistors; wide band gap semiconductors; zinc compounds; AMOLED; AMOLED displays; InGaZnO; OLED lighting time; a-IGZO TFT pixel circuit; charging voltage-generation method; grouping driving scheme; high frame rate displays; peripheral circuits; simultaneous voltage compensation; voltage -3 V; voltage 2 V; Active matrix organic light emitting diodes; Lighting; Logic gates; Programming; Thin film transistors; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467846