Title :
An ASIC to control the paralleling of an IGBT with a MOSFET
Author :
Yee, H.P. ; Liu, Dean
Author_Institution :
Semi-Tech. Design Inc., Seattle, WA, USA
Abstract :
By paralleling an IGBT with a MOSFET, a device with the low onstate voltage of an IGBT and the fast switching characteristics of a MOSFET can be achieved. However, in order to gain these advantages, the IGBT MOSFET pair must be carefully controlled. In this paper, an ASIC to intelligently control the IGBT/MOSFET combination is proposed, this ASIC uses the IGBT for on conduction and the MOSFET for turn off. The ASIC allows IGBT to turn off first and to recover before the MOSFET is turned off
Keywords :
MOSFET; application specific integrated circuits; field effect transistor switches; insulated gate bipolar transistors; intelligent control; power semiconductor switches; ASIC; IGBT MOSFET pair; fast switching characteristics; intelligent control; low onstate voltage; on conduction; parallel IGBT/MOSFET; turn off; Application specific integrated circuits; Design engineering; Insulated gate bipolar transistors; Intelligent control; Low voltage; MOSFET circuits; Power engineering and energy; Switching frequency; Timing; Zero voltage switching;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1997. APEC '97 Conference Proceedings 1997., Twelfth Annual
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-3704-2
DOI :
10.1109/APEC.1997.581446
