Title :
Rectifying behavior of Ag/MgO/SrRuO3 tunnel junction: First principles modeling of tunnel diode
Author :
Hongguang Cheng ; Ning Deng
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
We proposed a novel mechanism to realize a tunnel diode. The rectifying behavior of the tunnel junction attributes to the symmetry-filtering properties of MgO barrier as well as the location of the smallest decay band relative to the Fermi levels of two electrodes. As an example, the transport properties of the Ag/MgO/SrRuO3 tunnel junction are studied by first principles calculations based on DFT combined with NEGF technique. The tunnel junction shows good rectifying performance in a wide bias range with rectifying ratio of about 60. This rectifying effect could be used to achieve faster quantum devices.
Keywords :
Fermi level; Green´s function methods; discrete Fourier transforms; magnesium compounds; rectification; semiconductor device models; silver; strontium compounds; tunnel diodes; Ag-MgO-SrRuO3; DFT; Fermi levels; NEGF technique; decay band; noneqilibrium Green function; rectifying behavior; rectifying ratio; symmetry filtering barrier; tunnel diodes; tunnel junction; Discrete Fourier transforms; Electrodes; Epitaxial growth; Junctions; Lattices; Magnetic tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467855
