Title :
Non-quasi-static large signal transient model for heterojunction bipolar transistors
Author :
Ouslimani, A. ; Hafdallah, H. ; Medjnoun, M. ; Gaubert, J. ; Pouvil, P.
Author_Institution :
ENSE, Ecole Nat. de l´Electron. et de ses Appl., Pontoise, France
Abstract :
A NQS large-signal transient HBT model is proposed. It is based on a QS model and includes the base push-out effects and the NQS effect associated with the transient regime of the distributed charges in the neutral base. The influence of the NQS effect is demonstrated in the picosecond transient regime.
Keywords :
capacitance; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; transient analysis; HBT model; NQS effect; base push-out effects; distributed charges; heterojunction bipolar transistors; large signal transient model; neutral base; nonquasi-static model; picosecond transient regime; Analog-digital conversion; Delay effects; Digital integrated circuits; Heterojunction bipolar transistors; Kirk field collapse effect; Linearity; Predictive models; Reproducibility of results; Sampling methods; Threshold voltage;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779794
