Inspection system for fine gate patterns of GaAs-FET

Author

Sakamoto, Hasahiko ; Nakajima, Keiji ; Kosaka, Nobuyuki

Author_Institution

Mitsubish Electric Corp., Hyogo, Japan

fYear

1992

fDate

9-13 Nov 1992

Firstpage

1545

Abstract

An automatic system for GaAs-FET fine pattern defects has been developed to replace the current unreliable visual inspection by human eyes. The system uses a laser scanning microscope and information on both line width and reflected light intensity is used for the inspecting. A high-speed image processor has been developed to achieve a high inspection speed of 15 s per chip. The accuracy and the repeatability of the line width measurement are ±0.09 μm and ±0.02 μm. These values are good enough to be accepted in a production line, and the developed system has been put to practical use

Keywords

III-V semiconductors; automatic optical inspection; field effect transistors; gallium arsenide; image processing; semiconductor device testing; 15 s; FET; GaAs; accuracy; automatic optical inspection; fine gate patterns; image processor; laser scanning microscope; line width; production line; reflected light intensity; repeatability; semiconductor; Automatic optical inspection; FETs; Frequency; Gallium arsenide; High speed optical techniques; Laser beams; Manufacturing processes; Optical filters; Optical microscopy; Scanning electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, Control, Instrumentation, and Automation, 1992. Power Electronics and Motion Control., Proceedings of the 1992 International Conference on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0582-5

Type

conf

DOI

10.1109/IECON.1992.254371

Filename

254371