Title :
Heterojunction bipolar transistor technology for defense and commercial applications
Author :
Cowles, J. ; Oki, A. ; Streit, D.
Author_Institution :
Div. of Electron. Syst. & Technol., TRW Inc., Redondo Beach, CA, USA
Abstract :
GaAs heterojunction bipolar transistors (HBTs) have undergone a transition from defense applications to low cost, high volume commercial products for the portable wireless market. In particular, GaAs HBTs have traditionally targetted the front-end interface for RF transceivers, but their insertion has broadened to encompass demodulation, frequency conversion, digitization and clock-recovery functions. As GaAs HBTs establish their presence in the commercial arena, new device technologies are emerging offering better performance and innovative system and circuit options
Keywords :
UHF bipolar transistors; UHF integrated circuits; bipolar MIMIC; bipolar MMIC; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit technology; microwave bipolar transistors; millimetre wave bipolar transistors; AlGaAs-GaAs; GaAs; GaAs HBT technology; InP; InP HBT technology; RF transceivers; clock-recovery functions; commercial applications; defense applications; demodulation; frequency conversion; front-end interface; heterojunction bipolar transistors; portable wireless market; CMOS technology; FETs; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; Phase noise; Radio frequency; Silicon; Space technology; Voltage;
Conference_Titel :
Microwave and Optoelectronics Conference, 1997. Linking to the Next Century. Proceedings., 1997 SBMO/IEEE MTT-S International
Conference_Location :
Natal
Print_ISBN :
0-7803-4165-1
DOI :
10.1109/SBMOMO.1997.646786
