DocumentCode :
3420732
Title :
A structure of angular acceleration sensor using silicon cantilevered beam with piezoresistors
Author :
Furukawa, Naoyuki ; Ohnishi, Kouhei
Author_Institution :
Dept. of Electr. Eng., Kieo Univ., Yokohama, Japan
fYear :
1992
fDate :
9-13 Nov 1992
Firstpage :
1524
Abstract :
A piezoresistive angular acceleration sensor is developed by micromachining. The proposed angular acceleration sensor consists of four identical silicon cantilevered beams with piezoresistors which are arranged at the circumference of the rotary machine. The value of the piezoresistor changes according to the acceleration. The fabrication method of the silicon cantilevered beams and the electrical characteristics of the piezoresistors are shown. The theoretical relation between the acceleration force and the resistance variation of the piezoresistor is derived in accordance with a geometrical model of the silicon cantilevered beam. The simple dynamical behavior of the piezoresistive cantilevered beam is also discussed. Then, the optimal arrangement of the uniaxial acceleration sensors for measuring the angular acceleration in the rotary machine is considered. Experimental results are shown and discussed
Keywords :
acceleration measurement; electric sensing devices; piezoelectric devices; silicon; Si; angular acceleration sensor; cantilevered beams; dynamical behavior; electrical characteristics; fabrication method; geometrical model; micromachining; piezoresistors; Acceleration; Accelerometers; Fabrication; Micromachining; Particle beams; Piezoresistance; Piezoresistive devices; Sensor phenomena and characterization; Silicon; Structural beams;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, Control, Instrumentation, and Automation, 1992. Power Electronics and Motion Control., Proceedings of the 1992 International Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0582-5
Type :
conf
DOI :
10.1109/IECON.1992.254375
Filename :
254375
Link To Document :
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