Generalized Kushner analysis of RF power amplifiers

A new technique that accurately predicts the output power and drain efficiency of FET power amplifiers is described. This new technique uses a generalization of Kushner´s amplifier analysis method together with measured pulsed I-V data. The technique can be used to replace or supplement load-pull measurements that are performed during technology development and circuit design. Excellent agreement with experimental load-pull measurements is demonstrated for several different transistor technologies over a broad range of load resistances.