Title :
Modeling transient diffusion following high energy implantation
Author :
Rafferty, C.S. ; Gossmann, H.-J. ; Kamgar, A. ; Jacobson, D.C. ; Lloyd, E.J. ; Hillenius, S.J. ; Vuong, H.-H. ; Becerro, J. ; Vaidya, H.M. ; Lytle, S.A. ; Thoma, M.J. ; Luftman, H.S.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
Abstract :
The increasing use of high energy implantation (HEI) in tub formation, combined with the use of low temperature gate processing, leads to the potential for strong Transient Enhanced Diffusion (TED) effects in the channel profile. We have discovered through simulation and experiment an unexpected saturation of TED broadening in surface profiles. A profiled tub replacement using HEI in a manufacturing 0.5 /spl mu/m CMOS flow was designed through simulation.
Keywords :
CMOS integrated circuits; diffusion; ion implantation; semiconductor process modelling; 0.5 micron; CMOS manufacturing; channel profile; high energy implantation; low temperature gate processing; modeling; simulation; surface profile; transient enhanced diffusion; tub formation; Annealing; Boron; Implants; Ion implantation; Isolation technology; MOS devices; Manufacturing processes; Mass spectroscopy; Silicon; Weight control;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554098
