Title :
Multichip module technology with a copper-polyimide thin-film multilayer substrate
Author :
Yamaguchi, Satoru ; Tomimuro, Hisashi ; Ohno, Yukiharu ; Hino, Shigeki
Author_Institution :
NTT Interdisciplinary Res. Labs., Tokyo, Japan
Abstract :
This paper describes an advanced multichip module (MCM) constructed of a copper-polyimide thin-film multilayer MCM substrate, a compact package, and a high-lead-count connector for the MCM. The signal line in the MCM substrate was designed to be 25 μm wide and 10 μm thick to enable the transmission of pulses at several Gb/s. The dielectric thickness between the power and ground layers in the ceramic substrate was designed to be 50 μm, restricting simultaneous switching noise. The AlN ceramic package enabled sufficiently low chip-to-air thermal resistance of approximately 6.0°C/W in spite of the compact size of 20 mm square. The connector was designed to provide a characteristic impedance of 50 Ω. Prototype ATM switching modules successfully operated at about 700 MHz
Keywords :
B-ISDN; asynchronous transfer mode; copper; integrated circuit packaging; multichip modules; polymer films; thermal resistance; 1 Gbit/s; 10 mum; 25 mum; 50 mum; 700 MHz; ATM switching modules; Al2O3; Al2O3 substrate; AlN; AlN ceramic package; B-ISDN packaging technology; Cu; Cu-polyimide thin-film multilayer substrate; MCM substrate signal line; ceramic substrate; characteristic impedance; chip-to-air thermal resistance; compact package; dielectric thickness; high-lead-count connector; multichip module technology; pulse transmission; simultaneous switching noise; Ceramics; Connectors; Dielectric substrates; Dielectric thin films; Multichip modules; Nonhomogeneous media; Packaging; Signal design; Thermal resistance; Transistors;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International
Conference_Location :
Omiya
Print_ISBN :
0-7803-3622-4
DOI :
10.1109/IEMT.1995.540989
