DocumentCode
3421110
Title
High power handling RF MEMS design and technology
Author
Grenier, K. ; Dubuc, D. ; Ducarouge, B. ; Conedera, V. ; Bourrier, D. ; Ongareau, E. ; Derderian, P. ; Plana, R.
Author_Institution
LAAS-CNRS, Toulouse, France
fYear
2005
fDate
30 Jan.-3 Feb. 2005
Firstpage
155
Lastpage
158
Abstract
RF microelectromechanical (MEMS) switches are usually limited in term of power handling. Self actuation and electro migration constitute indeed the main failure mechanisms related to medium and high RF power. To overcome these malfunctions, an original MEMS topology based on the use of two bridge levels is proposed in this paper. Both appropriate design and technology have been developed in order to enhance power capabilities of MEMS switches. A power handling of 8W in cold switching has finally been reached.
Keywords
microswitches; microwave switches; 8 W; MEMS topology; RF microelectromechanical switches; RF power; cold switching; electromigration; failure mechanisms; power handling; self actuation; Bridge circuits; Coplanar waveguides; Electrodes; Electromigration; Failure analysis; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
ISSN
1084-6999
Print_ISBN
0-7803-8732-5
Type
conf
DOI
10.1109/MEMSYS.2005.1453890
Filename
1453890
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