Title :
24-27 GHz dielectrically stabilized oscillators with excellent phase noise properties utilizing InP/InGaAs HBTs
Author :
Guttich, U. ; Shin, H. ; Erben, U. ; Gaessler, C. ; Leier, H.
Author_Institution :
DaimlerChrysler Aerosp., Ulm, Germany
Abstract :
We report on the design, fabrication, and RF performances of 24-27 GHz dielectric resonator oscillators (DROs) using InP/InGaAs HBTs. The employed HBT devices yield f/sub T/ values of 70 GHz and f/sub max/ values of up to 180 GHz, respectively. The measured phase noise of -107 dBc at 100 kHz offset is significantly lower than that of comparable DROs using GaAs based HBTs. To our knowledge, this is the first demonstration of phase noise results on InP/InGaAs HBT DROs.
Keywords :
III-V semiconductors; dielectric resonator oscillators; gallium arsenide; heterojunction bipolar transistors; hybrid integrated circuits; indium compounds; integrated circuit design; integrated circuit noise; microwave integrated circuits; microwave oscillators; phase noise; 180 GHz; 24 to 27 GHz; 70 GHz; Al/sub 2/O/sub 3/; HBT DRO; InP-InGaAs; InP/InGaAs HBTs; RF performance; SHF; dielectric resonator oscillators; dielectrically stabilized oscillators; fabrication; hybrid MIC; phase noise properties; Dielectric measurements; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Noise measurement; Oscillators; Phase measurement; Phase noise; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779863
