24-27 GHz dielectrically stabilized oscillators with excellent phase noise properties utilizing InP/InGaAs HBTs

Author

Guttich, U. ; Shin, H. ; Erben, U. ; Gaessler, C. ; Leier, H.

Author_Institution

DaimlerChrysler Aerosp., Ulm, Germany

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

729

Abstract

We report on the design, fabrication, and RF performances of 24-27 GHz dielectric resonator oscillators (DROs) using InP/InGaAs HBTs. The employed HBT devices yield f/sub T/ values of 70 GHz and f/sub max/ values of up to 180 GHz, respectively. The measured phase noise of -107 dBc at 100 kHz offset is significantly lower than that of comparable DROs using GaAs based HBTs. To our knowledge, this is the first demonstration of phase noise results on InP/InGaAs HBT DROs.

Keywords

III-V semiconductors; dielectric resonator oscillators; gallium arsenide; heterojunction bipolar transistors; hybrid integrated circuits; indium compounds; integrated circuit design; integrated circuit noise; microwave integrated circuits; microwave oscillators; phase noise; 180 GHz; 24 to 27 GHz; 70 GHz; Al/sub 2/O/sub 3/; HBT DRO; InP-InGaAs; InP/InGaAs HBTs; RF performance; SHF; dielectric resonator oscillators; dielectrically stabilized oscillators; fabrication; hybrid MIC; phase noise properties; Dielectric measurements; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Noise measurement; Oscillators; Phase measurement; Phase noise; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779863

Filename

779863