DocumentCode
342116
Title
Influence of 2 GHz harmonic load-pull on HBT and MESFET output power and efficiency
Author
Rudolph, M. ; Lenk, F. ; Doerner, R. ; Heymann, P.
Author_Institution
Ferdinand-Braun-Inst. fur Hichstfrequenztech., Berlin, Germany
Volume
2
fYear
1999
fDate
13-19 June 1999
Firstpage
741
Abstract
The influence of harmonic tuning on output power (P/sub out/) and power added efficiency (PAE) for both HBTs and MESFETS is investigated. Results of measurements and harmonic balance simulations are compared, that illustrate the dependence of PAE and P/sub out/ on the second-harmonic load reflection angle.
Keywords
Schottky gate field effect transistors; UHF bipolar transistors; UHF field effect transistors; harmonics; heterojunction bipolar transistors; semiconductor device models; 2 GHz; HBT; MESFET; harmonic balance simulations; harmonic load-pull; harmonic tuning; output power; power added efficiency; second-harmonic load reflection angle; Circuit simulation; Frequency measurement; Heterojunction bipolar transistors; MESFETs; Power amplifiers; Power generation; Power system harmonics; Power system modeling; Reflection; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779866
Filename
779866
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