Title :
Influence of 2 GHz harmonic load-pull on HBT and MESFET output power and efficiency
Author :
Rudolph, M. ; Lenk, F. ; Doerner, R. ; Heymann, P.
Author_Institution :
Ferdinand-Braun-Inst. fur Hichstfrequenztech., Berlin, Germany
Abstract :
The influence of harmonic tuning on output power (P/sub out/) and power added efficiency (PAE) for both HBTs and MESFETS is investigated. Results of measurements and harmonic balance simulations are compared, that illustrate the dependence of PAE and P/sub out/ on the second-harmonic load reflection angle.
Keywords :
Schottky gate field effect transistors; UHF bipolar transistors; UHF field effect transistors; harmonics; heterojunction bipolar transistors; semiconductor device models; 2 GHz; HBT; MESFET; harmonic balance simulations; harmonic load-pull; harmonic tuning; output power; power added efficiency; second-harmonic load reflection angle; Circuit simulation; Frequency measurement; Heterojunction bipolar transistors; MESFETs; Power amplifiers; Power generation; Power system harmonics; Power system modeling; Reflection; Semiconductor device modeling;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779866
