Title :
Bulk microswitch for power RF applications
Author :
Muller, P.N. ; Rolland, N. ; Ziaei, A. ; Polizzi, J.-P. ; Collard, D. ; Buchaillot, L.
Author_Institution :
Inst. d´´Electronique, de Microelectronique et de Nanotechnologie, CNRS, Villeneuve d´´Ascq, France
fDate :
30 Jan.-3 Feb. 2005
Abstract :
This paper proposes a novel microswitch design for RF power applications as high as 10W in the 2MHz-2GHz frequency band. This device is an ohmic switch electrostatically actuated and fabricated in bulk silicon for heat dissipation purpose. Wafer level packaging solution is shown.
Keywords :
microswitches; microwave switches; semiconductor device packaging; 0.002 to 2 GHz; bulk microswitch; bulk silicon; electrostatic actuation; heat dissipation; ohmic switch; power RF applications; wafer level packaging; Biomembranes; Coplanar waveguides; Electrodes; Etching; Microswitches; Power semiconductor switches; Radio frequency; Silicon; Voltage; Wafer scale integration;
Conference_Titel :
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
Print_ISBN :
0-7803-8732-5
DOI :
10.1109/MEMSYS.2005.1453894
