Easy and accurate empirical transistor model parameter estimation from vectorial large-signal measurements

Author

Schreurs, D. ; Verspecht, J. ; Vandenberghe, S. ; Carchon, G. ; van der Zanden, K. ; Nauwelaers, B.

Author_Institution

ESAT, Katholieke Univ., Leuven, Heverlee, Belgium

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

753

Abstract

The standard empirical nonlinear model parameter estimation is often cumbersome as several measurement systems are involved. We show that the model generation complexity can be reduced tremendously by only using full two-port vectorial large-signal measurements. Furthermore, realistic operating conditions can easily be included in the optimisation procedure, as we illustrate on GaAs PHEMTs.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave transistors; millimetre wave transistors; optimisation; parameter estimation; semiconductor device measurement; semiconductor device models; GaAs; GaAs PHEMTs; empirical transistor model; optimisation procedure; realistic operating conditions; transistor model parameter estimation; vectorial large-signal measurements; Circuit simulation; Current measurement; Data mining; HEMTs; Measurement standards; Microwave devices; Parameter estimation; Phase measurement; Scattering parameters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779869

Filename

779869