DocumentCode
342121
Title
A high efficiency and low distortion GaAs power MMIC design in the wide load impedance range by extended use of load-pull method
Author
Ishida, K. ; Ikeda, H. ; Kosugi, H. ; Nishijima, Masahiko ; Uwano, T.
Author_Institution
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Volume
2
fYear
1999
fDate
13-19 June 1999
Firstpage
775
Abstract
A new design technique by an extended use of the load-pull method for a high efficiency and low distortion power amplifier in wide range of load impedances is proposed. A two stage GaAs MMIC power amplifier which meets the Japanese PHS standard with high efficiency and low distortion within load VSWR of 3 was designed by using this method.
Keywords
III-V semiconductors; MMIC power amplifiers; electric distortion; electric impedance; field effect MMIC; gallium arsenide; integrated circuit design; GaAs; GaAs power MMIC design; Japanese PHS standard; design technique; high efficiency; load-pull method; low distortion; two stage MMIC power amplifier; wide load impedance range; Circuits; Gallium arsenide; High power amplifiers; Impedance; Loaded antennas; MMICs; Power amplifiers; Reflection; Reflector antennas; Telephone sets;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779874
Filename
779874
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