A monolithic LSB rejection up converter for PCS

Author

Torres, J.A. ; Freire, J.C.

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

835

Abstract

A monolithic LSB (lower side band) rejection up converter from 300 MHz to 2.15 GHz for an RF front end of a short range personal communication system (PCS) demonstrator is presented. The GaAs MESFET technology MMIC includes an active power splitter, a balanced mixer, a passive power combiner and a RF power amplifier drive. A 10 dB gain and -1 dB bandwidth of 200 MHz was achieved. The balanced topology together with the matching networks of the power amplifier drive lead to a LSB rejection of 22 dB and LO to RF port isolation greater than -1 dB. Nominal local oscillator power is 5 dBm, and the -1 dB input compression point of -2 dBm was obtained.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC frequency convertors; UHF frequency convertors; gallium arsenide; impedance matching; personal communication networks; power combiners; 10 dB; 2.15 GHz; 200 MHz; GaAs; LO to RF port isolation; LSB rejection up converter; MESFET technology; MMIC; PCS; RF front end; RF power amplifier drive; active power splitter; balanced mixer; balanced topology; input compression point; local oscillator power; matching networks; passive power combiner; short range personal communication system; Bandwidth; Gain; Gallium arsenide; MESFETs; MMICs; Personal communication networks; Power amplifiers; Power combiners; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779889

Filename

779889