Title :
Influence of gate oxide short defects on the stability of minimal sized SRAM core-cell by applying non-split models
Author :
Galliere, J.M. ; Azais, F. ; Renovell, M. ; Dilillo, L.
Author_Institution :
Polytech Montpellier, Univ. of Montpellier II, Montpellier
Abstract :
In this paper, we study the impact of gate oxide short (GOS) defects in SRAM core-cells in terms of stability in static condition. Existing studies have applied split GOS models that require the use of non-realistic oversized designs. The novelty of this research is the application of a non-split GOS model, which allows the study of the electric deviation of the behavior of realistic minimal sized SRAM core-cells. The results of extensive simulations are produced, by taking in account defect variations in terms of position in the transistor gate oxide and resistance.
Keywords :
SRAM chips; circuit stability; failure analysis; integrated circuit modelling; SRAM core-cell stability; electric deviation; gate oxide short defect; nonsplit GOS model; split GOS model; transistor gate oxide; CMOS logic circuits; Degradation; Electric resistance; Isolation technology; Joining processes; Random access memory; Semiconductor device reliability; Semiconductor devices; Stability; Substrates;
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscal Era, 2009. DTIS '09. 4th International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-4244-4320-8
Electronic_ISBN :
978-1-4244-4321-5
DOI :
10.1109/DTIS.2009.4938060
