Influence of gate oxide short defects on the stability of minimal sized SRAM core-cell by applying non-split models

In this paper, we study the impact of gate oxide short (GOS) defects in SRAM core-cells in terms of stability in static condition. Existing studies have applied split GOS models that require the use of non-realistic oversized designs. The novelty of this research is the application of a non-split GOS model, which allows the study of the electric deviation of the behavior of realistic minimal sized SRAM core-cells. The results of extensive simulations are produced, by taking in account defect variations in terms of position in the transistor gate oxide and resistance.