• DocumentCode
    3421630
  • Title

    Investigation of EEPROM memories reliability during endurance and retention tests

  • Author

    Plantier, J. ; Aziza, H. ; Portal, J.M. ; Reliaud, C.

  • Author_Institution
    CNRS, IMT Technopole Chateau Gombert, Marseille
  • fYear
    2009
  • fDate
    6-9 April 2009
  • Firstpage
    241
  • Lastpage
    246
  • Abstract
    To ensure reliability of EEPROM devices, it is significant to monitor the evolution of the memory array threshold voltage (VT) distribution. In this work, impact of endurance and retention tests is evaluated on EEPROM VT distributions. To track accurately the evolution of the VT distribution, an innovative experimental plan is setup and experimental results are deeply analyzed.
  • Keywords
    EPROM; integrated circuit reliability; integrated circuit testing; integrated memory circuits; logic testing; voltage distribution; EEPROM memories reliability; endurance test; memory array threshold voltage distribution; retention test; Data mining; EPROM; Monitoring; Nonvolatile memory; Performance evaluation; Phased arrays; Portals; Testing; Threshold voltage; Tunneling; EEPROM; Endurance-retention tests; oxide degradation; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design & Technology of Integrated Systems in Nanoscal Era, 2009. DTIS '09. 4th International Conference on
  • Conference_Location
    Cairo
  • Print_ISBN
    978-1-4244-4320-8
  • Electronic_ISBN
    978-1-4244-4321-5
  • Type

    conf

  • DOI
    10.1109/DTIS.2009.4938063
  • Filename
    4938063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3421630