Modeling C-V shifts in boron/BF/sub 2/-implanted capacitors

Author

Vuong, H.-H. ; Rafferty, C.S. ; Mansfield, W. ; Luftman, H. ; Jacobson, D. ; Pinto, M.R. ; Eshraghi, S.A. ; Mcmacken, J.R. ; Ham, T.E.

Author_Institution

Bell Labs., Lucent Technol., Murray Hill, NJ, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

807

Lastpage

810

Abstract

We report on fabricated capacitors following B and BF/sub 2/ implantation with near-identical boron profiles as measured by SIMS. The C-V curves showed flatband shifts between the two implanted species which increase with the implant dose, up to 0.27 V for 1e14 cm/sup -2/. Modeling the processing with an interface trap model for boron in the case of BF/sub 2/ implant but not for B, gave good agreement with both SIMS doping profiles and the C-V curves, and reproduced the C-V shifts. This effect is predicted to have a significant impact on MOS V/sub th/.

Keywords

MOS capacitors; MOSFET; boron; boron compounds; doping profiles; electron traps; elemental semiconductors; ion implantation; secondary ion mass spectroscopy; semiconductor process modelling; silicon; 0.27 V; C-V shifts; MOS capacitors; SIMS; Si:B; Si:BF/sub 2/; doping profiles; flatband shifts; implant dose; interface trap model; threshold voltage; Boron; Capacitance-voltage characteristics; Capacitors; Implants; Jacobian matrices; MOSFETs; Oxidation; Semiconductor process modeling; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554102

Filename

554102