DocumentCode :
3421812
Title :
A vertically guided MEMS probe card with deeply recessed trench-type cantilever
Author :
Bong-Hwan Kirn ; Chung, Doo-Yin ; Chung, Chi-Hwan ; Chun, Tae-Un ; Seok, Seon-Ho ; Kim, Hymn-Cheol ; Chun, Kuljin
Author_Institution :
Seoul Nat. Univ., South Korea
fYear :
2005
fDate :
30 Jan.-3 Feb. 2005
Firstpage :
271
Lastpage :
274
Abstract :
We developed a vertically guided MEMS probe card with deeply recessed trench-type cantilever. This probe card was designed to achieve a displacement of 50 μm at a force of 1.5 gram. The measured contact resistance was about 0.4 ohm for 50 μm displacement. The leakage current between the shortest tips was approximately 10 pA. To implement fine pitch and make a vertically guided structure, a cantilever beam was formed inside the trench after deep RIE silicon etching. This probe card was capable of a 35 μm pad pitch.
Keywords :
contact resistance; leakage currents; micromechanical devices; probes; sputter etching; 50 micron; RIE silicon etching; cantilever beam; contact resistance measurement; fine pitch; leakage current; trench type cantilever; vertically guided MEMS probe card; Automatic testing; Circuit testing; Contact resistance; Etching; Fabrication; Integrated circuit interconnections; Micromechanical devices; Probes; Silicon; Structural beams;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
ISSN :
1084-6999
Print_ISBN :
0-7803-8732-5
Type :
conf
DOI :
10.1109/MEMSYS.2005.1453919
Filename :
1453919
Link To Document :
بازگشت