Research on power model of multi-mode FinFET standard cell

Author

Xiaoxin Cui ; Kaisheng Ma ; Kai Liao ; Nan Liao ; Di Wu ; Wei Wei ; Rui Li

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

FinFET, because of good device characteristics, manufacture process compatibility and the diversity of the circuit structure, is considered the best candidate for the conventional bulk-MOSFETs in sub-22nm technology nodes. In this paper, power model of multi-mode FinFET standard cells are discussed and the influence that back-gate voltage of FinFETs on leakage power and internal power of standard cell circuits is analyzed. The research results will lay foundation for library-based power analysis and modeling of FinFET circuits. Besides, some consideration is also crucial for low-power FinFET circuit designs.

Keywords

low-power electronics; power MOSFET; FinFET backgate voltage; bulk-MOSFET; library-based power analysis; library-based power modeling; low-power FinFET circuit designs; multimode FinFET standard cell power model; standard cell circuit internal power; standard cell circuit leakage power; FinFETs; Integrated circuit modeling; Libraries; Load modeling; Logic gates; Standards; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467923

Filename

6467923