Accurate doping profile determination using TED/QM models extensible to sub-quarter micron nMOSFETs

Author

Voorde, P.V. ; Griffin, P.B. ; Yu, Z. ; Oh, S.-Y. ; Dutton, R.W.

Author_Institution

ULSI Res. Lab., Hewlett-Packard Co., Palo Alto, CA, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

811

Lastpage

814

Abstract

Accurate doping profiles are needed to simulate device characteristics. We use capacitance-voltage curves to interrogate the doping profiles, threshold voltage, body effect, poly depletion and oxide thickness on a range of technology generations down to 0.18 /spl mu/m. Proper modeling of both transient enhanced diffusion (TED) and quantum mechanical (QM) effects is essential to ensure the simulations match all aspects of the C-V data. The agreement confirms that the predicted doping profiles are accurate. Device simulations using these doping profiles give the correct threshold voltage, body effect and DIBL characteristics.

Keywords

MOSFET; characteristics measurement; diffusion; doping profiles; semiconductor doping; semiconductor process modelling; 0.18 micron; DIBL characteristics; TED/QM models; body effect; capacitance-voltage curves; device characteristics; doping profile determination; oxide thickness; poly depletion; quantum mechanical effects; sub-quarter micron nMOSFETs; technology generations; threshold voltage; transient enhanced diffusion; Calibration; Capacitance measurement; Capacitance-voltage characteristics; Doping profiles; Laboratories; MOS devices; MOSFETs; Quantum mechanics; Semiconductor process modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554103

Filename

554103