Title :
Reduction of low-frequency noise in Si MOSFETs by using nanowire channel
Author :
Ohmori, Kenji ; Feng, Wenjie ; Hettiarachchi, R. ; Lee, Youngjoo ; Sato, Seiki ; Kakushima, K. ; Sato, Mitsuhisa ; Fukuda, Kenji ; Niwa, Masaaki ; Yamabe, K. ; Shiraishi, Kotaro ; Iwai, Hisato ; Yamada, Koji
Author_Institution :
Grad. Sch. of Pure & Appl. Sci., Univ. of Tsukuba, Tsukuba, Japan
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
We have investigated the noise spectral density of nanowire and planar FETs. It was experimentally found that the nanowire FET shows lower noise density than the planar FET. By a simulation using Poisson-Schrödinger equations, the distribution of inversion carriers in the nanowire channel is located further from the interface due to quantum confinement, which well explains the observed lower noise density of nanowire FET.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; elemental semiconductors; nanowires; silicon; Poisson-Schrodinger equations; Si; Si MOSFET; inversion carrier distribution; low-frequency noise; nanowire FET; nanowire channel; noise density; noise spectral density; planar FET; quantum confinement; Electron traps; FETs; Fluctuations; Logic gates; Mathematical model; Noise;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467928
