DocumentCode :
3422086
Title :
CdZnTe room-temperature semiconductor gamma-ray detector for national-security applications
Author :
Camarda, G.S. ; Bolotnikov, A.E. ; Cui, Y. ; Hossain, A. ; Kohman, K.T. ; James, R.B.
Author_Institution :
Brookhaven Nat. Lab., Upton,
fYear :
2007
fDate :
4-4 May 2007
Firstpage :
1
Lastpage :
8
Abstract :
One important mission of the Department of Energy´s National Nuclear Security Administration is to develop reliable gamma-ray detectors to meet the widespread needs of users for effective techniques to detect and identify special nuclear- and radioactive-materials. Accordingly, the Nonproliferation and National Security Department at Brookhaven National Laboratory was tasked to evaluate existing technology and to develop improved room-temperature detectors based on semiconductors, such as CdZnTe (CZT). Our research covers two important areas: Improving the quality of CZT material, and exploring new CZT-based gamma-ray detectors. In this paper, we report on our recent findings from the material characterization and tests of actual CZT devices fabricated in our laboratory and from materials/detectors supplied by different commercial vendors. In particular, we emphasize the critical role of secondary phases in the current CZT material and issues in fabricating the CZT detectors, both of which affect their performance.
Keywords :
II-VI semiconductors; cadmium compounds; gamma-ray detection; semiconductor counters; zinc compounds; CdZnTe; gamma-ray detector; material characterization; national-security application; nuclear materials; radioactive materials; room-temperature semiconductor; secondary phases; Electron traps; Energy resolution; Gamma ray detection; Gamma ray detectors; Laboratories; National security; Optical microscopy; Radioactive materials; Semiconductor materials; Tellurium; CdZnTe; Te inclusions; radiation detectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Systems, Applications and Technology Conference, 2007. LISAT 2007. IEEE Long Island
Conference_Location :
Farmingdale, NY
Print_ISBN :
978-1-4244-1302-7
Electronic_ISBN :
978-1-4244-1302-7
Type :
conf
DOI :
10.1109/LISAT.2007.4312640
Filename :
4312640
Link To Document :
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