Title :
Optimization of channel profiles for ultra-short MOSFETs by quantum simulation
Author :
Fiegna, C. ; Abramo, A.
Author_Institution :
Inst. of Eng., Ferrara Univ., Italy
Abstract :
In this paper, the self-consistent solution of l-D Poisson and Schrodinger equations is performed on doping profiles suitable for the fabrication of advanced ultra-short n-MOSFETs. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles. In addition, the more advanced double-gate structure is analyzed and the reasons for possible advantages over more conventional single-gate ones (either SOI- or bulk-type) are investigated.
Keywords :
MOSFET; Schrodinger equation; capacitance; doping profiles; electron mobility; inversion layers; semiconductor device models; semiconductor doping; semiconductor process modelling; 1D Schrodinger equations; channel profile optimisation; doping profiles; double-gate structure; gate-to-channel capacitance; lD Poisson equations; low-field electron effective mobility; quantum simulation; quantum-induced threshold voltage shifts; self-consistent solution; single-gate structure; ultra-short MOSFETs; Degradation; Doping profiles; Electron mobility; Fabrication; MOSFETs; Physics; Quantization; Quantum capacitance; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554104
