Title :
Downscaled graphene nanodevices: Fabrication and ab initio study
Author :
Mizuta, Hiroshi ; Moktadir, Z. ; Boden, Stuart A. ; Kalhor, Nima ; Shuojin Hang ; Schmidt, M.E. ; Nguyen Tien Cuong ; Dam Hieu Chi ; Otsuka, N. ; Manoharan, Manmohan ; Tsuchiya, Y. ; Chong, Harold ; Rutt, H.N. ; Bagnall, D.M.
Author_Institution :
Nano Group, Univ. of Southampton, Southampton, UK
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He+ ion beam. We then study the effects of the He+ ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along with underlying carrier scattering mechanisms. Finally we study the effects of various point defects in extremely-scaled GNRs on the carrier transport properties using ab initio simulation.
Keywords :
graphene; ion implantation; nanofabrication; C; GNR; He; bilayer graphene nanoribbon; carrier scattering mechanisms; carrier transport properties; direct milling; downscaled graphene nanodevices; fabrication process; ion beam; ion bombardment; ion exposure; Conductivity; Graphene; Ion beams; Lithography; Milling; Resists; Scattering;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467940
