Downscaled graphene nanodevices: Fabrication and ab initio study

Author

Mizuta, Hiroshi ; Moktadir, Z. ; Boden, Stuart A. ; Kalhor, Nima ; Shuojin Hang ; Schmidt, M.E. ; Nguyen Tien Cuong ; Dam Hieu Chi ; Otsuka, N. ; Manoharan, Manmohan ; Tsuchiya, Y. ; Chong, Harold ; Rutt, H.N. ; Bagnall, D.M.

Author_Institution

Nano Group, Univ. of Southampton, Southampton, UK

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

4

Abstract

In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size He⁺ ion beam. We then study the effects of the He⁺ ion exposure on the carrier transport properties in a bilayer graphene nanoribbon (GNR) by varying the time of He ion bombardment, along with underlying carrier scattering mechanisms. Finally we study the effects of various point defects in extremely-scaled GNRs on the carrier transport properties using ab initio simulation.

Keywords

graphene; ion implantation; nanofabrication; C; GNR; He; bilayer graphene nanoribbon; carrier scattering mechanisms; carrier transport properties; direct milling; downscaled graphene nanodevices; fabrication process; ion beam; ion bombardment; ion exposure; Conductivity; Graphene; Ion beams; Lithography; Milling; Resists; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467940

Filename

6467940