DocumentCode
3422267
Title
Device concepts using two-dimensional electronic materials: Graphene, MoS2 , etc
Author
Schwierz, Frank ; Pezoldt, Jorg
Author_Institution
Inst. fur Mikro- und Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany
fYear
2012
fDate
Oct. 29 2012-Nov. 1 2012
Firstpage
1
Lastpage
4
Abstract
Recently graphene, a carbon-based 2D material, has attracted a lot of attention in the device community and many groups have successfully fabricated graphene MOSFETs with impressing performance. One should recognize, however, that graphene is not the only 2D material. In fact there is a variety of 2D materials beyond graphene that may be of interest for transistors as well. This paper provides an overview on the current status of graphene transistors and then introduces several other 2D materials such as dichalcogenides, silicene, and germanene. The status of these materials in regard to electronic applications, in particular transistors, is discussed.
Keywords
MOSFET; carbon; molybdenum compounds; semiconductor materials; transistors; 2D material; C; MOSFET; MoS2; carbon-based 2D material; device community; dichalcogenide; germanene; graphene transistor; silicene; two-dimensional electronic materials; Graphene; MOSFETs; Radio frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4673-2474-8
Type
conf
DOI
10.1109/ICSICT.2012.6467941
Filename
6467941
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