• DocumentCode
    3422267
  • Title

    Device concepts using two-dimensional electronic materials: Graphene, MoS2, etc

  • Author

    Schwierz, Frank ; Pezoldt, Jorg

  • Author_Institution
    Inst. fur Mikro- und Nanotechnologien, Tech. Univ. Ilmenau, Ilmenau, Germany
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Recently graphene, a carbon-based 2D material, has attracted a lot of attention in the device community and many groups have successfully fabricated graphene MOSFETs with impressing performance. One should recognize, however, that graphene is not the only 2D material. In fact there is a variety of 2D materials beyond graphene that may be of interest for transistors as well. This paper provides an overview on the current status of graphene transistors and then introduces several other 2D materials such as dichalcogenides, silicene, and germanene. The status of these materials in regard to electronic applications, in particular transistors, is discussed.
  • Keywords
    MOSFET; carbon; molybdenum compounds; semiconductor materials; transistors; 2D material; C; MOSFET; MoS2; carbon-based 2D material; device community; dichalcogenide; germanene; graphene transistor; silicene; two-dimensional electronic materials; Graphene; MOSFETs; Radio frequency; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467941
  • Filename
    6467941